Epitaxial YSZ film was deposited directly on biaxially-textured (001) Mi ta
pes using pulsed-laser deposition. Nucleation of the YSZ film on Wi is achi
eved without the intentional removal of the native oxide from the Mi (001)
surface. The epitaxial YSZ layer grown on the Wi (001) surface was used as
a single buffer layer for a high temperature superconducting coated conduct
or architecture, yielding YBa2Cu3O7 films with critical current density of
1 MA/cm(2) at 77 K. This architecture eliminates the necessity for a multil
ayer buffer architecture, as high J(c) superconducting films are achieved w
ith no intermediate buffer layer between the (001) YSZ and the biaxially te
xtured metal.