Reported here is a novel epitaxial buffer layer configuration combined with
MgO and CeO2 on biaxially texture Mi substrates for high temperature super
conducting (HTS) tapes. The hetero-epitaxial CeO2/MgO/Ni structure was grow
n by magnetron sputtering method. After formation of the buffer layers, 0-2
0 and phi scans of x-ray diffraction were used to measure the film in-plane
and out-plane orientation, respectively. The deposited CeO2 and MgO buffer
layers showed good in-plane alignment.