Growth and physical properties of Hg-1212HTSC tapes on buffered metal substrates

Citation
Yy. Xie et al., Growth and physical properties of Hg-1212HTSC tapes on buffered metal substrates, PHYSICA C, 341, 2000, pp. 2505-2506
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
4
Pages
2505 - 2506
Database
ISI
SICI code
0921-4534(200011)341:<2505:GAPPOH>2.0.ZU;2-B
Abstract
Fast Temperature Ramping Annealing (FTRA:) combined with a cation-exchange process is applied in the fabrication of HgBa2Ca1Cu2Ox (Hg-1212) supercondu cting tapes on Rolling Assisted Biaxially Textured Substrates (RABiTSs). Tl 2Ba2CaCu2Ox (Tl-2212:) precursor films were synthesized on RABiTSs and then converted into Hg-1212 films. By employing the FTRA process in the synthes is of Tl-2212 films, significant improvement was achieved in terms of surfa ce morphology as well as in-plane alignment. These features were retained i n the Hg-1212 films during Tl-Hg cation-exchange. T-c of Hg-12.12 films is up to 124K and J(c) is up to 10(5)A/cm(2) (OT) at 115K. Further improvement s in J(c) are expected for optimized synthesis conditions.