Recently, we have succeeded in fabricating HTS ring resonators by using the
double-side YBCO films deposited on LaAlO3 (LAO) substrates. Quality facto
r (Q) over 10(4) at 5 K with resonating frequency of 3.61 GHz has been demo
nstrated. Furthermore, by creating a narrow gap in the same ring structure,
we found that the resonating frequency splits into two, one occurred at ha
lf and three halves of the original one (i.e. at 1.80 GHz and 5.33 GHz, res
pectively). The temperature dependence of the resonating frequency and Q-va
lue were studied in detail. We found that although the resonating frequency
changes by introducing the gap, the Q-value remains essentially unchanged.