Microwave characterization of HgBa2CaCu2O6+delta thin films

We assessed the potential of Hg-based high-T-c superconducting thin films f or microwave applications by measuring its microwave surface resistance R-s and microwave power handling capability. HgBa2CaCu2O6+delta (Hg-1212) epit axial thin films were fabricated using cation-exchange. They are c-axis ori ented with thickness of about 0.3 mum. Their T(c)s are typically similar to 120 K. On un-patterned films, we obtained an R-s of 0.3 m Omega at 10 GHz and 100 K using Nb cavity perturbation technique. For power handling measur ements, we fabricated Hg-1212 microstrip structure and determined the maxim um power it could handle at 1 GHz. At 100 K, output power was very stable u p to 19 dBm (critical operating power level) and above that level, non-line arity between input and output power was observed. When temperature was inc reased to 112 K, critical power level dropped to 16 dBm. These microwave pr operties suggest that Hg-1212 films;Ire very promising for microwave device applications above 100 K.