Infrared detectors consisting of thin film PbZrTiO3/YBa2Cu3O7-x oxide-heter
ostructures have been fabricated. The YBCO thin film used as the bottom con
ductive electrode significantly increases the performance of pyroelectric I
R detector. Detectivity values of similar to 10(8) cm Hz(1/2)/W at room tem
perature have been obtained for simple heterostructure device configuration
s in IR-wavelength range of 1 mum to 20 mum. Reactive ion etching (RIE) has
been used to etch the YBCO and the other oxide layers for the development
of an air bridge structure which further reduces thermal mass and increases
the operation frequency of the IR detector.