Doping induced enhancement of the critical currents of grain boundaries inhigh-T-c superconductors

Authors
Mannhart, J Bielefeldt, H Goetz, B Hilgenkamp, H Schmehl, A Schneider, CW Schulz, RR
Citation
J. Mannhart et al., Doping induced enhancement of the critical currents of grain boundaries inhigh-T-c superconductors, PHYSICA C, 341, 2000, pp. 1393-1396
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
3
Pages
1393 - 1396
Database
ISI
SICI code
0921-4534(200011)341:<1393:DIEOTC>2.0.ZU;2-V
Abstract
Appropriate doping of the grains provides a means to optimize the transport properties of grain boundaries in high-T-c superconductors. This is demons trated for the exemplary case of grain boundaries in bicrystalline Ca- and Go-doped YBa2Cu3O7-delta films. By Ca-doping the critical current density i s strongly increased and the normal state resistivity significantly reduced as compared to the values obtained for equivalent junctions in undoped fil ms.