Dislocation migration activation energies for HTSC ceramics from temperature dependence of the solitonic wave of change in reflection and conduction

Authors
Kudriavtsev, EM Emel'yanov, VI Krivov, VV Lotkova, EN Zotov, SD Autric, M
Citation
Em. Kudriavtsev et al., Dislocation migration activation energies for HTSC ceramics from temperature dependence of the solitonic wave of change in reflection and conduction, PHYSICA C, 341, 2000, pp. 1853-1854
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
3
Pages
1853 - 1854
Database
ISI
SICI code
0921-4534(200011)341:<1853:DMAEFH>2.0.ZU;2-M
Abstract
The dislocation migration activation energies, E-dm, were estimated based o n the comparison of a model and experimental results for velocity temperatu re dependence of wave of change of reflection and conduction, a new heat tr ansport phenomenon. These values E-dn, are the as follows: 0.001eV; 0.02eV; 0.04eV for YBaCuO, NdCeCuO. LaSrCuO and 0.002eV for Ge single crystal, res pectively.