LuNi2B2C films have been prepared by a Pulsed Laser Deposition technique. T
he deposition parameters have been optimized to reach good superconducting,
structural and morphological properties with high reliability. In order to
deposit different patterned layers for in-situ junctions production, a spe
cial set-up for the in situ interchanging of shadow masks has been develope
d. We studied the growth of different materials to be used as barrier layer
s. New results on the temperature dependence of the LuNi2B2C gap using S/N
contact junctions are presented and discussed.