Pseudogap effects on the normal state transport in copper oxide materials

Authors
Citation
Sp. Feng et F. Yuan, Pseudogap effects on the normal state transport in copper oxide materials, PHYSICA C, 341, 2000, pp. 899-900
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
2
Pages
899 - 900
Database
ISI
SICI code
0921-4534(200011)341:<899:PEOTNS>2.0.ZU;2-K
Abstract
Within the framework of the fermion-spin theory, the normal state transport property of copper oxide materials in the underdoped regime is studied bas ed on the t-J model. It is shown that there is a common relaxation mechanis m for the in-plane and c-axis transport, i.e., the in-plane and c-axis tran sport properties are mainly governed by the scattering from the in-plane fl uctuation, which would be suppressed when the holon pseudogap opens at low temperatures, leading to the temperature linear to the nonlinear range in t he in-plane resistivity and crossovers to the semiconducting-like range in the c-axis resistivity.