Current ramping rate dependence of the critical current in 2H-NbSe2 crystals

Citation
Zl. Xiao et al., Current ramping rate dependence of the critical current in 2H-NbSe2 crystals, PHYSICA C, 341, 2000, pp. 1163-1164
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
2
Pages
1163 - 1164
Database
ISI
SICI code
0921-4534(200011)341:<1163:CRRDOT>2.0.ZU;2-R
Abstract
By measuring the critical current at current ramping rate of 2x10(-5) Als t o 5x10(2) Als we find that at a fined temperature and magnetic field the cr itical current in pure 2H-NbSe2 increases with increasing current ramping r ate. These experiments show that metastable states, which are missed in the usual transport measurements, do exis t in the field cooled vortex lattice . We also show that the fast transport technique provides a means of probin g the initial vortex lattice.