Experimental evidence of the decoupling line in Bi 2212 single crystal by electronic transport measurements

Citation
D. Thopart et al., Experimental evidence of the decoupling line in Bi 2212 single crystal by electronic transport measurements, PHYSICA C, 341, 2000, pp. 1311-1312
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
2
Pages
1311 - 1312
Database
ISI
SICI code
0921-4534(200011)341:<1311:EEOTDL>2.0.ZU;2-W
Abstract
Both in-plane rho (ab) and out-of-plane rho (c) resistivities measurements have been measured on Bi 2212 single crystals with a magnetic field applied along the c-axis direction. By studying the temperature dependence of the resistivity ratio, rho (ab)/rho (c), we identify a pancake "vortex gas" pha se. This phase is limited at low temperature by a crossover to an anisotrop ic tridimensional vortex lines liquid phase in which we observe a thermally activated behavior of rho (ab) which is in good agreement with the vortex loop creation model. Our data suggest a dimensional crossover describing th e decoupling of the liquid state into a decoupled pancake "vortex gas" stat e well above the first order melting line.