Mechanism of Tc enhancement in Cu1-xTlx-1234 and-1223 system with Tc > 130K

Authors
Ihara, H Tanaka, K Tanaka, Y Iyo, A Terada, N Tokumoto, M Ariyama, M Hase, I Sundaresan, A Hamada, N Miyashita, S Tokiwa, K Watanabe, T
Citation
H. Ihara et al., Mechanism of Tc enhancement in Cu1-xTlx-1234 and-1223 system with Tc > 130K, PHYSICA C, 341, 2000, pp. 487-488
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
1
Pages
487 - 488
Database
ISI
SICI code
0921-4534(200011)341:<487:MOTEIC>2.0.ZU;2-L
Abstract
A new Tc enhancement method, a combination of alloying of Cu- and Tl-system and selective reduction for hole-doping has been developed for Cu(1-x)Tl(x )Ba(2)Ca(2)Cu(3)O10-y (Cu1-xTlx-1223) system. The method is very effective for the Tc enhancement up to 132 K for Cu1-xTlx-1223 and 126 K for Cu1-xTlx -1234(x=0.4 similar to0.9). A new concept of band degeneration effect is pr oposed as the Tc enhancement mechanism for a common optimum hole-doping in every CuO2 layers.