Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

Authors
Jones, R Coomer, BJ Goss, JP Oberg, S Briddon, PR
Citation
R. Jones et al., Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si, PHYS ST S-B, 222(1), 2000, pp. 133-140
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
222
Issue
1
Year of publication
2000
Pages
133 - 140
Database
ISI
SICI code
0370-1972(200011)222:1<133:IDATDT>2.0.ZU;2-A
Abstract
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested t hat the formation of these defects on dislocation cores could lead to the D 1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.