Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

Citation
R. Jones et al., Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si, PHYS ST S-B, 222(1), 2000, pp. 133-140
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
222
Issue
1
Year of publication
2000
Pages
133 - 140
Database
ISI
SICI code
0370-1972(200011)222:1<133:IDATDT>2.0.ZU;2-A
Abstract
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested t hat the formation of these defects on dislocation cores could lead to the D 1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.