About the D1 and D2 dislocation luminescence and its correlation with oxygen segregation

It is well known that the dislocation luminescence (DL) in silicon consists of four main bands, conventionally labelled D1 to D4, where E-1 = 0.807 eV , E-2 = 0.874 eV, E-3 = 0.95 eV and E-4 = 0.99 eV, of which the D1 is consi dered of interest for optoelectronic devices working in the third window of optical communications. Although DL has been the subject of a number of in vestigations in the last twenty years, still some questions remain open, co ncerning both the origin of the dislocation luminescence and its intrinsic or extrinsic nature. We report in this paper the results of a combination o f complementary dislocation generation processes (deformation and oxide seg regation) and characterisation procedures (photoluminescence and surface ph otovoltage), which give a strong evidence that the D1 band is correlated in a very complex manner with the presence of optically active silicon self-i nterstitials and oxygen clusters.