On the properties of the intrinsic point defects in silicon: A perspectivefrom crystal growth and wafer processing

Taking into account a wide variety of recent results from studies of silico n crystal growth and high temperature wafer heat treatments, a consistent p icture of intrinsic point defect behavior is produced. The relevant point d efect parameters: diffusivities, equilibrium concentrations and the details of the interaction of vacancies with oxygen are deduced. This set of param eters successfully explains a very wide array of experimental observations covering the temperature range 900-1410 degreesC. These experimental observ ations, which are reviewed here, include the properties of grown-in microde fects and vacancy-controlled oxygen precipitation effects in rapidly cooled wafers. The analysis of point defect behavior from observations of high te mperature phenomena such as these has the great advantage of relative simpl icity and transparency.