Iridium-related deep levels in n-type silicon

Iridium-related deep levels in n-type silicon were studied by Deep Level Tr ansient Spectroscopy (DLTS). Two different sets of samples were used which differ in the Ir-doping process. Stable Ir isotopes were introduced in the melt during the Boating-zone growth process. Other samples were implanted w ith radioactive mercury isotopes, which decay via gold and platinum to irid ium or osmium. In these samples an identification of Ir-related levels from the known half-life of the isotopes is possible. Two dominant levels at E- c - 0.28 eV and E-c - 0.57 eV are assigned to isolated substitutional Ir. T wo other levels at E-c - 0.17 eV and E-c - 0.45 eV are identified as iridiu m-hydrogen complexes containing one or two hydrogen atoms, respectively.