Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers

Thin Ta layers deposited on Si (100) substrates were irradiated with 475 ke V Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures betwe en room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were mo nitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to dep end linearly on the ion fluence and was explained with the help of a compou nd formation model involving global thermal spikes.