Hs. Yoon et al., STRUCTURAL-PROPERTIES OF TIO2 FILMS GROWN BY PULSED-LASER DEPOSITION, Bulletin of the Korean Chemical Society, 18(6), 1997, pp. 640-643
Pure titanium dioxide (TiO2) films were prepared by pulsed laser depos
ition on a single crystal Si(100) substrate. We have investigated the
growth of crystalline titanium dioxide films with respect to substrate
temperature and ambient oxygen pressure. The structural properties of
the films were analyzed by X-ray diffraction. We found that the anata
se as well as the rutile phases could be formed from the original ruti
le phase of the target TiO2. At 0.75 torr of ambient oxygen pressure,
the structure of TiO2 film was amorphous at room temperature, anatase
between 300 and 600 degrees C, a mixture of anatase and rutile between
700 and 800 degrees C, and only rutile at 900 degrees C and above. Ho
wever, at a low ambient oxygen pressure, the rutile phase became domin
ant; the only rutile phase was obtained at the ambient oxygen pressure
of 0.01 torr and the substrate temperature of 800 degrees C. Therefor
e, the film structures were largely influenced by substrate temperatur
e and ambient oxygen pressure.