Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

A clean Si(100) surface was reacted at temperatures over the range 750-1050 degreesC with methane-silane-hydrogen plasma. The reaction products on the surface were investigated using x-ray photoelectron spectroscopy, reflecti on high-energy electron diffraction, infrared absorption spectroscopy and a tomic force microscopy. The results indicate that using substrate temperatu res higher than 800 degreesC the reaction products on the surface are epita xial islands that have a beta -silicon carbide crystalline structure. For l ower temperatures a more planar layer with a loss in the crystalline qualit y was observed.