Preparation of thin film SOFCs working at reduced temperature

Citation
P. Charpentier et al., Preparation of thin film SOFCs working at reduced temperature, SOL ST ION, 135(1-4), 2000, pp. 373-380
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
135
Issue
1-4
Year of publication
2000
Pages
373 - 380
Database
ISI
SICI code
0167-2738(200011)135:1-4<373:POTFSW>2.0.ZU;2-C
Abstract
SOFCs are expected to become competitive devices for electrical power gener ation, but successful application is dependent on reducing the working temp erature from 1000 to 800 degreesC, without detrimental effects on resistanc e and on electrode processes. This requires a reduction of the stabilized z irconia electrolyte thickness and an optimization of the electrodes and int erfaces. We have studied the preparation of thin film SOFC devices working at intermediate temperature (< 850<degrees>C). Ni/YSZ cermet anodes were pr epared by a conventional ceramic method and support the cells. Thin yttria stabilized zirconia electrolytes (YSZ) and thin La0.7Sr0.3MnO3 (LSM) cathod es were deposited by a spray method onto a Ni/YSZ cermet. Complete cells ha ve been tested under humidified hydrogen and methane at 850 degreesC. (C) 2 000 Elsevier Science B.V. All rights reserved.