Investigation of charging/discharging phenomena in nano-crystal memories

In this work we will give a detailed account of the charging/discharging ph enomena occurring in semiconductor nano-crystal memories. Memory transfer c haracteristics and write/erase transient characteristics are studied for de vices with different technological parameters. Experimental results are exp lained by means of a semi-classical model, based on a modified current cont inuity approach. This model depicts the effect of the tunnel/top dielectric thickness, dot recovered area and programming voltage on the device perfor mance. (C) 2000 Academic Press.