Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (SRTMOST)

The effects of the off-set energy between the dielectric films which are fo rmed at the both edges of the channel and the Si substrate on the electrica l characteristics are examined for the Si resonant tunneling MOST (SRTMOST) . The barrier height of the dielectric films has a great influence on the o peration of the SRTMOST. The relationship between the transmission coeffici ent and the off-set energy of the double barrier/Si is calculated as well a s the relationships between the gate-off currents, the transition time from the source to the drain and the off-set energy. It was found that the crit ical off-set energy of dielectric film/Si is approximately 1.0-1.5 eV. (C) 2000 Academic Press.