Formation of unintentional dots in small Si nanostructures

Authors
Rokhinson, LP Guo, LJ Chou, SY Tsui, DC
Citation
Lp. Rokhinson et al., Formation of unintentional dots in small Si nanostructures, SUPERLATT M, 28(5-6), 2000, pp. 413-417
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
28
Issue
5-6
Year of publication
2000
Pages
413 - 417
Database
ISI
SICI code
0749-6036(200011/12)28:5-6<413:FOUDIS>2.0.ZU;2-2
Abstract
We studied charge transport through lithographycally defined Si quantum dot s. At low temperatures multi-dot transport is observed. In particular, we a nalyzed transport through double-dot devices. The data provide compelling e vidence that the extra dots are formed within the gate oxide. (C) 2000 Acad emic Press.