Semi-empirical and practical model for low-electric field direct tunnelingcurrent estimation in nanometer-thick SiO2 films

Authors
Nakatsuji, H Shimizu, A Omura, Y
Citation
H. Nakatsuji et al., Semi-empirical and practical model for low-electric field direct tunnelingcurrent estimation in nanometer-thick SiO2 films, SUPERLATT M, 28(5-6), 2000, pp. 425-428
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
28
Issue
5-6
Year of publication
2000
Pages
425 - 428
Database
ISI
SICI code
0749-6036(200011/12)28:5-6<425:SAPMFL>2.0.ZU;2-S
Abstract
This paper describes a simplified model of the direct tunneling current cha racteristics of thin SiO2 films. The theoretical direct tunneling current c alculations take into account the dark space at the Si/SiO2 interface in a simple manner. Theoretical curves comparatively well reproduce experimental results in low gate voltages. (C) 2000 Academic Press.