Ultimate sub-25 nm gate length NMOSPETs transport at 293 and 77 K

For the first time, sub-25 nm physical gate length NMOS device characteriza tion at 293 and 77 K is reported. Transistor performances are discussed thr ough series resistance as well as carrier mobility and velocity behaviour v iewpoint. The former is shown to be an important source of deterioration of the on-state current in our device. Due to the ultra-thin 1.2 nm gate oxid e, transport mechanism becomes limited by interface scattering rather than ballistic transport. Nevertheless, the saturation current to off-state leak age current ratio increases at 77 K as compared with 293 K. BF2 halo effici ency in increasing this ratio is also demonstrated at both temperatures. (C ) 2000 Academic Press.