Subthreshold and scaling of PtSi Schottky barrier MOSFETs

We examine the subthreshold behavior of metal oxide semiconductor field eff ect transistors (MOSFETs) with Schottky barrier (SB) source/drain and large on/off ratios. Thermionic emission dominates the drain current versus gate voltage curves and the sharp turn on is attributed to a decrease in the ef fective hole barrier with Sate bias. We present a simple 1D model and find excellent agreement between the experimentally determined effective barrier s and the calculated results. Smaller devices exhibit significantly degrade d characteristics, which are attributed to a sub-surface punch-through of t he source and drain depiction widths at zero Sate bias. Implications for SB MOSFETs are discussed. (C) 2000 Academic Press.