Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

Authors
Fossum, JG Ren, ZB Kim, K Lundstrom, M
Citation
Jg. Fossum et al., Extraordinarily high drive currents in asymmetrical double-gate MOSFETs, SUPERLATT M, 28(5-6), 2000, pp. 525-530
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
28
Issue
5-6
Year of publication
2000
Pages
525 - 530
Database
ISI
SICI code
0749-6036(200011/12)28:5-6<525:EHDCIA>2.0.ZU;2-I
Abstract
Numerical simulation results derived from a Schrodinger-Poisson tool applie d to scaled double-gate (DG) MOSFETs, supplemented by analytical characteri zations of the pertinent physics, are presented to give insight concerning the near-ideal features of DG devices and to explain how the low-voltage dr ive current of the asymmetrical DG MOSFET, having only one predominant chan nel, can be comparable to, and even higher than, that of the symmetrical-ga te counterpart designed to have the same off-state current. (C) 2000 Academ ic Press.