The structure, electrical transport, and optical properties of GaSe fi
lms fabricated by means of radio-frequency (RF) magnetron sputtering i
n Ar were investigated. The as-sputtered GaSe films were amorphous, an
d their optical energy gap E-g are 1.9 similar to 2.6 eV. The effect o
f the synthesis conditions on the optical and electrical properties of
the GaSe films has also been studied.