Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)(3)](4) and H2O

Zirconium oxide thin films were grown by atomic layer deposition (ALD) at l ow temperatures, ranging from 150 degreesC to 300 degreesC, by alternate su rface reactions between Zr[OC(CH3)(3)](4) and H2O. The films grown in the t emperature range 200-300 degreesC were nanocrystalline. No films could be d eposited above 300 degreesC, The refractive index of the films reached 1.95 , measured at a wavelength of 580 nm. The permittivity of the nanocrystalli ne films was approximately 32. The permittivity and resistivity of the film s were increased by depositing ZrO2-Ta2O5 nanolaminates and annealing in am bient air.