UNIFORM ULTRA-THIN PB(ZR,TI)O-3 FILMS FORMED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AND THEIR ELECTRICAL CHARACTERISTICS

Lead zirconate titanate (Pb(Zr,Ti)Os) thin films were deposited on Pt films sputtered on thermally oxidized silicon wafers by metal-organic chemical vapor deposition (MOCVD). The films were less than 100 nm thi ck (typically 80 nm), thin enough for use in LSI semiconductor memorie s. The films were characterized by inductive coupling plasma mass spec troscopy and X-ray diffraction. Electrical measurements revealed that the films had good ferroelectric characteristics, with a low coercive voltage of 0.7 V. In addition; the non-switching dielectric characteri stics for application to dynamic random access memory (DRAM) were equi valent to those of 0.4 nm of SiO2 with small leakage current.