INTERACTION OF PBTIO3 FILMS WITH SI SUBSTRATE

An investigation was made of the reasons why ferroelectric PbTiO3 film s are hard to grow on single-crystal Si substrates. PbTiO3 films were formed on Si(100) and MgO(100) single-crystal substrates, and X-ray ph otoelectron spectroscopy (XPS) was used to analyze the composition, ch emical structure and oxidation state at the interface between the subs trate and the film. It was found that lead, oxygen and silicon diffuse d markedly at the interface and that the PbTiO3 him experienced both a lead deficiency and Si diffusion. These phenomena are thought to be t he reasons why it is difficult to form good PbTiO3 films on silicon su bstrates by chemical vapor deposition (CVD). It was observed that the addition of TiO2 and ZrO2 films at the interface with the silicon subs trate reduced the diffusion of Si to the PbTiO3 film.