Pyroelectric properties of Pb0.9La0.1TiO3 (PLT(10)) thin films on p-doped poly silicon

Pyroelectric properties of the PLT(10) thin film deposited on a p-doped pol y-Si electrode have been studied by using the static measurement method. Me asurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reache s a maximum at 295 degreesC, which can be thought of as the Curie temperatu re. The PLT(10) thin film on p-doped poly-Si fabricated in this research sh ows excellent pyroelectric properties. The pyroelectric coefficient and the figures of merit, Fy and FD at room temperature are measured as 5.76x10(-4 )C/m(2)K, 1.17x10(-10)C.cm/J and 0.93x10(-8)C.cm/J, respectively.