FILM DEGRADATION IN ALN PREPARATION BY FACING TARGET SYSTEM

In AlN films prepared by the facing target system, a decrease in degre e of c-axis orientation, film coloring and film cracking or peeling fr om the substrate were observed. This film degradation is thought to be related to insulative films in general. In order to clarify how these phenomena are induced, we prepared samples under various sputtering c onditions; i.e., by changing target holders, placing a ground mesh in front of the substrate and using a positively biased electrode. It is confirmed that plasma exposure severely influences c-axis orientation of AlN films. To decrease this influence, it is important that electro ns flow adequately into the anode.