Citation
B. Yang et al., 32 x 32 ultraviolet Al0.1Ga0.9N/GaN p-i-n photodetector array, IEEE J Q EL, 36(11), 2000, pp. 1229-1231
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197
→ ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
1229 - 1231
Database
ISI
SICI code
0018-9197(200011)36:11<1229:3X3UAP>2.0.ZU;2-L
Abstract
We report the fabrication and performance of a 32 x 32 Al0.1Ga0.9N/GaN ultr
aviolet p-i-n photodetector array. The devices exhibit very low dark curren
t, the mean dark current density is similar to4 nA/cm(2) at 5-V reverse bia
s, and the dark current distribution is very uniform (similar to 98% of the
devices exhibit dark current density <90 nA/cm(2)), Owing to the design of
the p-Al0.13Ga0.87N window layer, the external quantum efficiency is as hi
gh as 72% at 357 nm. The photocurrent distribution is also presented. The d
etectivity is estimated to be as high as 8 x 10(14) cm.Hz(1/2).W-1.