FABRICATION OF LEAD TITANATE THIN-FILM BY LASER-ABLATION WITH ALTERNATE DEPOSITION OF LEAD-OXIDE AND TITANIUM-OXIDE PRECURSORS

Preferentially oriented PbTiO3 thin films have been deposited on Si an d Pt substrates by the laser ablation method using an ArF excimer lase r. First, PbO and TiO2 ceramic targets are evaporated alternately, and PbTiO3 film is prepared on a Si substrate with natural oxide in a fix ed stoichiometric ratio which was achieved by controlling the number o f irradiation pulses. The obtained film shows a preferred a-axis orien tation. Secondly, a TiO2 buffer layer is formed on Si a substrate with natural oxide. The lead lanthanum titanate (PLT) film deposited on th is buffered layer has a preferred a-axis orientation.