Lead zirconate titanate thin films have been successfully fabricated b
y reactive evaporation. Elemental Pb, Zr, and Ti were evaporated in oz
one-oxygen mixture ambient. Excellent controls of uniformity of thickn
ess and composition were achieved over a large area (within +/-2% on 4
-inch wafer). The electrical properties were examined as a function of
Pb content in the films. High dielectric constant (epsilon similar to
1000) and low leakage current (1.7x10(-7) A/cm(2)) were realized for
the film with stoichiometric composition.