Effect of the coupling between the normal and lateral degrees of freedom on localized electronic states in superlattice's with structural defects

Using a effect-barrier height method, we investigate the effect of coupling between normal and lateral degree of freedom of an electron on the localiz ed electronic states at zero and finite magnetic fields perpendicular to in terfaces in SL's with structural defect layer within the framework of effec tive-mass theory. The numerical calculations for GaAs/Al(x)Gal(1-x)As mater ial show that minibands, minigaps and localized levels is obviously depende nt on the transverse wave number k(xy). Magneto-coupling effect brings abou t not only the splitting of the localized electron levels but also the defi nite dependence of the minibands, minigaps, localized levels and localizati on degree on magnetic field and Landau indices. It is believed that applyin g an appropriate magnetic field may provide a available way to control the minibands, minigaps and localized levels in structural defect superlattice' s to match practice requirements.