Silicon carbide for microelectromechanical systems

Silicon carbide (SiC) has recently attracted attention as a wide bandgap se miconductor with great potential for microelectromechanical systems (MEMS). SIC exhibits excellent electrical, mechanical, and chemical properties, ma king it well suited for harsh environment applications where traditional ME MS are constrained by the physical limitations of silicon (Si). This paper reviews the material properties, deposition techniques, micromachining proc esses, and other issues regarding the fabrication of SiC-based sensors and actuators. Special emphasis is placed on the properties that make SIC attra ctive for MEMS, and the Si-based processing techniques that have been adapt ed to realise SiC MEMS structures and devices. An introduction to micromach ining is provided for readers not familiar with MEMS fabrication techniques .