Radiation grafting of vinyl monomers onto poly(tetrafluoroethylene) powderproduced by gamma irradiation and properties of grafted poly(tetrafluoroethylene) filled low density polyethylene

Citation
E. Akinay et T. Tincer, Radiation grafting of vinyl monomers onto poly(tetrafluoroethylene) powderproduced by gamma irradiation and properties of grafted poly(tetrafluoroethylene) filled low density polyethylene, J APPL POLY, 79(5), 2001, pp. 816-826
Citations number
38
Categorie Soggetti
Organic Chemistry/Polymer Science","Material Science & Engineering
Journal title
JOURNAL OF APPLIED POLYMER SCIENCE
ISSN journal
00218995 → ACNP
Volume
79
Issue
5
Year of publication
2001
Pages
816 - 826
Database
ISI
SICI code
0021-8995(20010131)79:5<816:RGOVMO>2.0.ZU;2-D
Abstract
Scrap poly(tetrafluoroethylene) (PTFE) was gamma irradiated under an ambien t atmosphere in order to produce extensive chain scission and oxidative deg radation. After irradiation the PTFE was ground into a fine powder (2 degre es -PTFE) and graft;ed with styrene (St), vinyl acetate (VAc), and 4-vinylp yridine (4-VP) by using the direct irradiation technique. The grafted PTFE were then blended with low density polyethylene (LDPE). The study covered t he characterization of irradiated PTFE and grafted 2 degrees -PTFE powder w ith various methods. Mechanical grinding was found to reduce trapped radica ls formed during the irradiation process faster than the annealing process. Grafting on 2 degrees -PTFE was followed by gravimetric analysis, TGA, and the change in the particle size of the samples. Although we reached almost 20% grafting by weight in the St and 4-VP monomers, VAc grafting was found to be maximum at around 8% by weight at the maximum absorbed dose. The add ition of VAc grafted 2 degrees -PTFE into LDPE produced better final mechan ical properties with a fine dispersion. However, as may be expected, the in corporation of the other two 2 degrees -PTFEs into LDPE showed low film qua lity and poor mechanical properties. (C) 2000 John Wiley & Sons, Inc.