Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy

Epitaxial growth of AlInGaN/GaN heterostructures on sapphire substrates was achieved by plasma-induced molecular beam epitaxy. Different alloy composi tions were obtained by varying the growth temperature with constant Al, In, Ga and N fluxes. The In content in the alloy, measured by Rutherford backs cattering spectroscopy, increased from 0.4% to 14.5% when the substrate tem perature was decreased from 775 degreesC to 665 degreesC. X-ray reciprocal space maps of asymmetric AlInGaN (2.05) reflexes were used to measure the l attice constants and to verify the lattice match between the quaternary all oy and the GaN buffer layers. (C) 2000 Elsevier Science B.V. All rights res erved.