Transmission electron microscopy study of hexagonal GaN film grown on GaAs(001) substrate by using AlAs nucleation layer

Authors
Wan, L Duan, XF Chen, H Liu, HF Li, ZQ Huang, Q Zhou, JM
Citation
L. Wan et al., Transmission electron microscopy study of hexagonal GaN film grown on GaAs(001) substrate by using AlAs nucleation layer, J CRYST GR, 220(4), 2000, pp. 379-383
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
220
Issue
4
Year of publication
2000
Pages
379 - 383
Database
ISI
SICI code
0022-0248(200012)220:4<379:TEMSOH>2.0.ZU;2-D
Abstract
Hexagonal gallium nitride (h-GaN) films have been grown on AlAs nucleation layer by using radio frequency (RF) plasma source-assisted molecular beam e pitaxy on GaAs (001) substrate. Transmission electron microscopy (TEM) tech niques are used to characterize such h-GaN epilayers. TEM results show that (0001) atom planes of h-GaN are parallel to (001) atom planes of the GaAs substrate. Defects, such as stacking faults and dislocations, have also bee n observed. O 2000 Elsevier Science B.V. All rights reserved.