Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

We present experimental flux-temperature phase diagrams for surface reconst ruction transitions on the 6.1 Angstrom compound semiconductors. The phase transitions occur within or near typical substrate temperature ranges for g rowth of these materials by molecular beam epitaxy and therefore provide a convenient temperature standard for optimizing growth conditions. Phase bou ndaries for InAs (001) [(2 x 4) --> (4 x 2)], AlSb (001) [c(4 x 4) --> (1 x 3)], and GaSb (001) [(2 x 5) --> (1 x 3)] are presented as a function of s ubstrate temperature and Group V-limited growth rate (proportional to flux) , for both cracked and uncracked Group V species. We discuss differences be tween materials in the slopes and offsets of the phase boundaries for both types of Group V species. (C) 2000 Elsevier Science B.V. All rights reserve d.