Cellular-automata-based simulation of anisotropic crystal growth

Extending the simulation of anisotropic etching, a cellular-automata-based simulator is applied to anisotropic crystal growth. This simulator takes ad vantage of the equivalence between dissolution and growth of crystals. Meta lorganic vapour-phase epitaxial growth experiments were performed on patter ned (100)-oriented InP substrates with very deep V-shaped grooves with {111 }A sidewalls to determine the relevant growth rates of InGaAs and InP. The capability of the simulation method is demonstrated by quantitative compari son of simulated and experimental results. In addition, the versatility of the model is shown with area-selective growth. (C) 2000 Elsevier Science B. V. All rights reserved.