Structural investigation of gallium oxide (beta-Ga2O3) nanowires grown by arc-discharge

Gallium oxide nanowires were synthesized by electric are discharge of GaN p owders mixed with a small amount of Ni and Co. The crystal structure of nan owires was determined by multi-channel X-ray diffractometry (MC-XRD), FT-Ra man spectroscopy and transmission electron microscopy (TEM). The analyzed r esults clearly show that the synthesized nanowires are monoclinic gallium o xide (beta -Ga2O3). Final morphology and microstructure of beta -Ga2O3 nano wires were changed depending on the presence of the transition metals into the nanowires. The beta -Ga2O3 nanowires grown by the assistance of transit ion metals demonstrate a smooth edge surface while containing twin defects at the center. The transition metals have enhanced the step growth of nanow ires. However, in the case of the beta -Ga2O3 nanowires, where the transiti on metals are not shown on the surface, the nanowires demonstrate rather th in and long shapes with amorphous gallium oxide layers on the nanowire surf ace. (C) 2000 Elsevier Science B.V. All rights reserved.