Citation
Y. Tomm et al., Czochralski grown Ga2O3 crystals, J CRYST GR, 220(4), 2000, pp. 510-514
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
220
Issue
4
Year of publication
2000
Pages
510 - 514
Database
ISI
SICI code
0022-0248(200012)220:4<510:CGGC>2.0.ZU;2-U
Abstract
We report on the successful growth of beta -Ga2O3 single crystals using the
Czochralski method. Model calculations show that the gas phase consists of
Ga2O, GaO or Ga independent of the ratio of oxygen and Ar or N-2. We find
that for growing single crystals the evaporation has to be suppressed by a
finite amount of oxygen. A CO2/Ar gas atmosphere was found to meet this req
uirement. (C) 2000 Elsevier Science B.V. All rights reserved.