Citation
M. Grassl et al., Etch studies on GaPO4 single crystals, J CRYST GR, 220(4), 2000, pp. 522-530
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
220
Issue
4
Year of publication
2000
Pages
522 - 530
Database
ISI
SICI code
0022-0248(200012)220:4<522:ESOGSC>2.0.ZU;2-E
Abstract
Etch figures on gallium orthophosphate (GaPO4) crystals are presented for t
he {0 0 1}, {0 1 0}, {2 (1) over bar 0}, {(2) over bar 1 0} and (1 0 1} fac
es. Primarily they are used in detecting possibly occurring domains of twin
ning. Generally, the etch figures of GaPO4 show similarities as well as dif
ferences compared to those of low-quartz modifications of SiO2 and AlPO4. (
C) 2000 Elsevier Science B.V. All rights reserved.