A strong influence of growth temperature on the deposition rate and refract
ive index of TiO2 thin films, grown by atomic layer deposition from TiCl4 a
nd H2O was observed. The growth rate increased from 0.05 to 0.09 nm per cyc
le while the refractive index decreased from 2.83 to 2.00 with the increase
of growth temperature from 150 degreesC to 225 degreesC. The effect was du
e to crystallization processes starting at these temperatures. The substrat
e temperature range, in which the growth rate most significantly changed, d
epended on the TiCl4 pulse time. (C) 2000 Elsevier Science B.V. All rights
reserved.