Anomalous effect of temperature on atomic layer deposition of titanium dioxide

Citation
J. Aarik et al., Anomalous effect of temperature on atomic layer deposition of titanium dioxide, J CRYST GR, 220(4), 2000, pp. 531-537
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
220
Issue
4
Year of publication
2000
Pages
531 - 537
Database
ISI
SICI code
0022-0248(200012)220:4<531:AEOTOA>2.0.ZU;2-T
Abstract
A strong influence of growth temperature on the deposition rate and refract ive index of TiO2 thin films, grown by atomic layer deposition from TiCl4 a nd H2O was observed. The growth rate increased from 0.05 to 0.09 nm per cyc le while the refractive index decreased from 2.83 to 2.00 with the increase of growth temperature from 150 degreesC to 225 degreesC. The effect was du e to crystallization processes starting at these temperatures. The substrat e temperature range, in which the growth rate most significantly changed, d epended on the TiCl4 pulse time. (C) 2000 Elsevier Science B.V. All rights reserved.