A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation

Citation
M. Vladimirova et al., A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation, J CRYST GR, 220(4), 2000, pp. 631-636
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
220
Issue
4
Year of publication
2000
Pages
631 - 636
Database
ISI
SICI code
0022-0248(200012)220:4<631:ANMOMI>2.0.ZU;2-X
Abstract
We show that the theoretical description of the spontaneous evolution of an epitaxially growing surface towards self-organised structures, changes qua litatively when the simultaneous presence of several chemical species is ta ken into account. In the framework of a two-particle model studied by Monte -Carlo simulations we prove that a growing surface can exhibit step meander ing, step bunching and mounding in different growth regimes, assuming only positive Ehrlich-Schwoebel step-edge barrier. (C) 2000 Elsevier Science B.V . All rights reserved.