Electrical characteristics of a lateral field emission array for display applications

We proposed and investigated the characteristics of a lateral field emissio n array (LFEA) structure with polycrystalline silicon emitters using the LO GOS (local oxidation of polysilicon) process for display applications. We f abricated an LFEA device which had a 600x600 mum(2) pixel with 28 cathode t ips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 muA/pixel at a substrate-to-cathode v oltage of 40 V and V-GC=0 V. Ii phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, t he LEFA will be highly applicable as a field emission display with many adv antages, such as simple process, easy distance control between the anode an d the cathode, and low process cost.